ورقة بحثية
Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme = النموذج المعملي للمقاومات المستخدمة في s’IC RF Silicon لنظام امثل ومتين

Leduc. Philippe.


 

Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme = النموذج المعملي للمقاومات المستخدمة في s’IC RF Silicon لنظام امثل ومتين

Leduc. Philippe.

Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN) resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate"). The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN) resistors integrated...

مادة فرعية

المؤلف : Leduc. Philippe.

مؤلف مشارك : Magnon, Didier
Guitton, Fabrice

بيانات النشر : Muscat، Sultanate of Oman : Sultan Qaboos Journal of Science، 2002مـ.

التصنيف الموضوعي : العلوم البحتة| .

المواضيع : Electricity .

الكهرباء .

رقم الطبعة : 1

المصدر : Sultan Qaboos University : Muscat، Sultanate of Oman.

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